| PART |
Description |
Maker |
| AS102P-16G-RBL AS102P-128G-RGY AS102P-16G-RGY AS10 |
Meeting the Challenge of High-
|
A-Data Technology
|
| SI3035 SI3021-BS SI3021-KS SI3021-KT SI3024-KT SI3 |
3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT
3.3V FCC/JATE direct access arrangement, digital interface
3.3 V FCC/JATE DAA (Direct Access Arrangement) digital interface
|
Silicon Laboratories
|
| TX4045B-D3-4.4-20.000-MS |
Fully meeting SMC (Sonet Minimum Clock) requirements
|
Raltron Electronics Corporation
|
| AT9933DB1 |
High Bright LED Driver IC Meeting Automotive Requirements
|
Supertex, Inc
|
| APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
| TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
Toshiba Semiconductor
|
| APT50M80LLC APT50M80B2LC |
POWER MOS IV 500V 58A 0.080 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| PBF-1206-22 PBF-1201 PBF-1201-22 PBF-1202-22 PBF-1 |
Equipment Designed to Conform EMI Regulations Such As VCCI/CISPR/FCC/VDE/etc
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc
KPTC 8C 8#20 SKT PLUG
|
http://
LAMBDA[DENSEI-LAMBDA]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| 3SK258 E001712 |
N CHANNEL DUAL GATE MOS TYPE (TV/ FM TUNER VHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
